Studies of electron trapping in GaN doped with carbon

    Authors

    O. Lopatiuk; L. Chernyak; Y. Feldman;K. Gartsman

    Comments

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    Abbreviated Journal Title

    Thin Solid Films

    Keywords

    nitrides; semiconductors; luminescence; scanning electron microscopy; ACCEPTOR BINDING-ENERGIES; INJECTION; ALN; Materials Science, Multidisciplinary; Materials Science, Coatings &; Films; Physics, Applied; Physics, Condensed Matter

    Abstract

    Irradiation by the beam of the scanning electron microscope is shown to induce a systematic decay of the cathodoluminescence intensity in gallium nitride semiconductor doped with carbon. This decay is accompanied by increased electronic carrier diffusion length, indicating that electron irradiation results in the increase of carrier lifetime. Temperature-dependent cathodoluminescence measurements yielded activation energy for irradiation-induced effect of 210 meV. This observation is consistent with trapping of non-equilibrium electrons on deep, non-ionized carbon levels. (c) 2006 Elsevier B.V. All rights reserved.

    Journal Title

    Thin Solid Films

    Volume

    515

    Issue/Number

    10

    Publication Date

    1-1-2007

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    4365

    Last Page

    4368

    WOS Identifier

    WOS:000245167000012

    ISSN

    0040-6090

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