Studies of minority carrier transport in ZnO

    Authors

    O. Lopatiuk-Tirpak;L. Chernyak

    Comments

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    Abbreviated Journal Title

    Superlattices Microstruct.

    Keywords

    ZnO; minority carrier diffusion length; cathodoluminescence; electron; irradiation; TEMPERATURE-DEPENDENCE; DOPED GAN; ELECTRON; Physics, Condensed Matter

    Abstract

    The temperature dependence of the minority carrier diffusion length and lifetime in bulk n-type ZnO was studied using Electron-Beam-Induced Current (EBIC) and cathodoluminescence (CL) techniques. The diffusion length was observed to increase exponentially over the temperature range from 25 to 125 degrees C, yielding an activation energy of 45 +/- 2 meV A concomitant decrease of the cathodoluminescence intensity for the near-band-edge transition was also observed. The activation energy determined by optical measurements was 58 +/- 7 meV. The larger minority carrier diffusion length and smaller luminescence intensity are attributed to the increased lifetime of non-equilibrium holes in the valence band at elevated temperatures. Carrier trapping on Li-related levels with activation energy 283 +/- 9 meV is also addressed. (c) 2007 Elsevier Ltd. All rights reserved.

    Journal Title

    Superlattices and Microstructures

    Volume

    42

    Issue/Number

    1-6

    Publication Date

    1-1-2007

    Document Type

    Article; Proceedings Paper

    Language

    English

    First Page

    201

    Last Page

    205

    WOS Identifier

    WOS:000250271200036

    ISSN

    0749-6036

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