Optical and morphological properties of MBE grown Wurtzite CdxZn1-xO thin films

    Authors

    J. W. Mares; F. R. Ruhge; A. V. Thompson; P. G. Kik; A. Osinsky; B. Hertog; A. M. Dabiran; P. P. Chow;W. V. Schoenfeld

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Opt. Mater.

    Keywords

    zinc oxide; cadmium zinc oxide; wide band gap; wurtzite oxides; CHEMICAL-VAPOR-DEPOSITION; BAND-GAP; YELLOW LUMINESCENCE; ZNO; MGXZN1-XO; TEMPERATURE; EPILAYERS; DEVICES; ALLOY; Materials Science, Multidisciplinary; Optics

    Abstract

    Wurtzite CdxZn1-xO epilayers with cadmium concentrations ranging from x = 0.02 to 0.30 were investigated using photolummescence, transmission/reflection spectroscopy, and atomic force microscopy. The CdxZn1-xO photoluminescence peak was found to shift through the visible region from 421 (2.95 eV) to 619 nm (2.0 eV) as the cadmium concentration was increased from 2% to 30%. An additional broad photoluminescence peak was observed and is attributed to deep levels-the center of the broad peak was found to shift from 675 to 750 nm as the cadmium concentration was increased. RMS roughness of the epilayers increased from 1.5 nm (x = 0.02) to 9.2 nm (x = 0.30), as determined from atomic force microscopy. The demonstrated visible wavelength tunability throughout the visible range verifies the viability of using wurtzite CdxZn1-xO compounds for visible light emission in future optoelectronic devices. (C) 2006 Elsevier B.V. All rights reserved.

    Journal Title

    Optical Materials

    Volume

    30

    Issue/Number

    2

    Publication Date

    1-1-2007

    Document Type

    Article

    Language

    English

    First Page

    346

    Last Page

    350

    WOS Identifier

    WOS:000250189300025

    ISSN

    0925-3467

    Share

    COinS