Inter-valence-band hot hole laser in two-dimensional delta-doped homoepitaxial semiconductor structures

    Authors

    R. E. Peale; M. V. Dolguikh;A. V. Muravjov

    Comments

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    Abbreviated Journal Title

    J. Nanoelectron. Optoelectron.

    Keywords

    terahertz; far-infrared; laser; germanium; gallium arsenide; P-GE LASER; WAVELENGTH SELECTION; TERAHERTZ RADIATION; CAVITY; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    This paper reviews, compares, and contrasts recent gain calculations for a laser concept in delta-doped p-Ge and p-GaAs. Gain is calculated using distribution functions, determined from Monte Carlo simulations, for hot holes in crossed electric and magnetic fields. The results suggest that Ge is the superior material when considering only the factor of optical gain, but the possibility of lasing in GaAs can take advantage of a wider range of growth opportunities.

    Journal Title

    Journal of Nanoelectronics and Optoelectronics

    Volume

    2

    Issue/Number

    1

    Publication Date

    1-1-2007

    Document Type

    Review

    Language

    English

    First Page

    51

    Last Page

    57

    WOS Identifier

    WOS:000248112700005

    ISSN

    1555-130X

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