Title

Inter-valence-band hot hole laser in two-dimensional delta-doped homoepitaxial semiconductor structures

Authors

Authors

R. E. Peale; M. V. Dolguikh;A. V. Muravjov

Comments

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Abbreviated Journal Title

J. Nanoelectron. Optoelectron.

Keywords

terahertz; far-infrared; laser; germanium; gallium arsenide; P-GE LASER; WAVELENGTH SELECTION; TERAHERTZ RADIATION; CAVITY; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

This paper reviews, compares, and contrasts recent gain calculations for a laser concept in delta-doped p-Ge and p-GaAs. Gain is calculated using distribution functions, determined from Monte Carlo simulations, for hot holes in crossed electric and magnetic fields. The results suggest that Ge is the superior material when considering only the factor of optical gain, but the possibility of lasing in GaAs can take advantage of a wider range of growth opportunities.

Journal Title

Journal of Nanoelectronics and Optoelectronics

Volume

2

Issue/Number

1

Publication Date

1-1-2007

Document Type

Review

DOI Link

http://dx.doi.org/10.1166/jno.2007.004

Language

English

First Page

51

Last Page

57

WOS Identifier

WOS:000248112700005

ISSN

1555-130X

Recommended Citation

"Inter-valence-band hot hole laser in two-dimensional delta-doped homoepitaxial semiconductor structures" (2007). Faculty Bibliography 2000s. 7515.
https://stars.library.ucf.edu/facultybib2000/7515