Room temperature hydrogen response kinetics of nano-micro-integrated doped tin oxide sensor

    Authors

    S. Shukla; P. Zhang; H. J. Cho; S. Seal;L. Ludwig

    Comments

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    Abbreviated Journal Title

    Sens. Actuator B-Chem.

    Keywords

    hydrogen; response kinetics; MEMS; sensor; tin oxide; SOL-GEL NANOCRYSTALS; GAS SENSORS; THIN-FILMS; SNO2; MICROSENSORS; IMPREGNATION; SENSITIVITY; CO; Chemistry, Analytical; Electrochemistry; Instruments & Instrumentation

    Abstract

    The nano-micro-integrated sensor has been fabricated by sol-gel depositing the nanocrystalline indium oxide (In2O3)-doped tin oxide (SnO2) thin film on microelectromechanical systems (MEMS) device having interdigitated electrode configurations with two different electrode spacing (10 mu m and 20 mu m) and two different number of fingers (8 and 20). The present nano-micro-integrated sensor exhibits high H-2 sensitivity range (S = 3-10(5)) for the H-2 concentration within the range of 100-15,000 ppm at room temperature. It has been demonstrated that, the room temperature response kinetics of the present nano-micro-integrated sensor is a function of finger spacing, H-2 concentration and air-pressure, but independent of number of fingers. Such dependence has been explained on the basis of Le Chatelier's principle applied to the associated H-2 sensing mechanism and the role of above parameters in shifting the dynamic equilibrium of the involved surface reactions under the described test conditions. A new definition of the response time has been proposed, which is not only suitable for the theoretical analysis but also for the practical applications, where a gas-leak detection alarm is required to be triggered. (c) 2006 Published by Elsevier B.V.

    Journal Title

    Sensors and Actuators B-Chemical

    Volume

    120

    Issue/Number

    2

    Publication Date

    1-1-2007

    Document Type

    Article

    Language

    English

    First Page

    573

    Last Page

    583

    WOS Identifier

    WOS:000244073600032

    ISSN

    0925-4005

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