Silicon-carbide-based extreme environment temperature sensor using wavelength-tuned signal processing

    Authors

    N. A. Riza;M. Sheikh

    Comments

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    Abbreviated Journal Title

    Opt. Lett.

    Keywords

    HARSH ENVIRONMENTS; Optics

    Abstract

    A wavelength-tuned signal-processing approach is proposed for enabling direct unambiguous temperature measurement in a free-space targeted single-crystal silicon carbide (SiC) temperature sensor. The approach simultaneously exploits the 6H SiC fundamental Sellmeier equation-based wavelength-sensitive refractive index change in combination with the classic temperature-dependent refractive index change and the material thermal-expansion path-length change to encode SiC chip temperature with wavelength. Presently, the technique is useful for fast coarse temperature measurement as demonstrated from room temperature to 1000 degrees C using a 10-peak count wavelength-tuned measurement with a 0.31 nm total wavelength change. This coarse technique can be combined with the previously presented two-wavelength signal-processing temperature measurement approach to simultaneously deliver a wide temperature range and a high-resolution temperature sensor. Applications for the sensor range from power plants to materials processing facilities. (C) 2008 Optical Society of America.

    Journal Title

    Optics Letters

    Volume

    33

    Issue/Number

    10

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    1129

    Last Page

    1131

    WOS Identifier

    WOS:000256520500032

    ISSN

    0146-9592

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