Silicon microspheres for near-IR communication applications

    Authors

    A. Serpenguzel;A. Demir

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Semicond. Sci. Technol.

    Keywords

    STIMULATED RAMAN-SCATTERING; BEAM-SHAPE COEFFICIENTS; CHANNEL-DROPPING; FILTER; INSULATOR WAVE-GUIDE; LORENZ-MIE THEORY; ON-INSULATOR; LOCALIZED; APPROXIMATION; RIGOROUS JUSTIFICATION; OPTICAL MODULATOR; AXIS BEAMS; Engineering, Electrical & Electronic; Materials Science, ; Multidisciplinary; Physics, Condensed Matter

    Abstract

    We have performed transverse electric and transverse magnetic polarized elastic light scattering calculations at 90 degrees and 0 degrees in the o-band at 1.3 mu m for a 15 mu m radius silicon microsphere with a refractive index of 3.5. The quality factors are on the order of 10(7) and the mode/channel spacing is 7 nm, which correlate well with the refractive index and the optical size of the microsphere. The 90 degrees elastic light scattering can be used to monitor a dropped channel (drop port), whereas the 0 degrees elastic scattering can be used to monitor the transmission channel (through port). The optical resonances of the silicon microspheres provide the necessary narrow linewidths that are needed for high-resolution optical communication applications. Potential telecommunication applications include filters, modulators, switches, wavelength converters, detectors, amplifiers and light sources. Silicon microspheres show promise as potential building blocks for silicon-based electrophotonic integration.

    Journal Title

    Semiconductor Science and Technology

    Volume

    23

    Issue/Number

    6

    Publication Date

    1-1-2008

    Document Type

    Article

    Language

    English

    First Page

    8

    WOS Identifier

    WOS:000255758900010

    ISSN

    0268-1242

    Share

    COinS