Voltage stress effect on class AB power amplifier and mixed-signal sample-hold circuit

    Authors

    J. S. Yuan;J. Ma

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    BIAS TEMPERATURE INSTABILITY; GATE-OXIDE BREAKDOWN; HOT-CARRIER STRESS; PERFORMANCE DEGRADATION; CMOS TECHNOLOGY; SOFT BREAKDOWN; RELIABILITY; IMPACT; LOCATION; MODEL; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    The effects of gate and drain voltage stress and breakdown location on the class AB power amplifier and mixed-signal sample-hold circuit have been studied. The soft breakdown has minor effect on the performance of the power amplifier and sample-hold circuit, while the hard breakdown at the drain side reduces the power efficiency of the class AB power amplifier and degrades the signal to noise ratio of the sample-hold circuit significantly. Also, hot electron effect reduces the linearity of the class AB power amplifier. (C) 2010 Elsevier Ltd. All rights reserved

    Journal Title

    Microelectronics Reliability

    Volume

    50

    Issue/Number

    6

    Publication Date

    1-1-2010

    Document Type

    Article

    Language

    English

    First Page

    801

    Last Page

    806

    WOS Identifier

    WOS:000278644400008

    ISSN

    0026-2714

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