Voltage stress effect on class AB power amplifier and mixed-signal sample-hold circuit

    Authors

    J. S. Yuan;J. Ma

    Comments

    Authors: contact us about adding a copy of your work at [email protected]

    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    BIAS TEMPERATURE INSTABILITY; GATE-OXIDE BREAKDOWN; HOT-CARRIER STRESS; PERFORMANCE DEGRADATION; CMOS TECHNOLOGY; SOFT BREAKDOWN; RELIABILITY; IMPACT; LOCATION; MODEL; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    The effects of gate and drain voltage stress and breakdown location on the class AB power amplifier and mixed-signal sample-hold circuit have been studied. The soft breakdown has minor effect on the performance of the power amplifier and sample-hold circuit, while the hard breakdown at the drain side reduces the power efficiency of the class AB power amplifier and degrades the signal to noise ratio of the sample-hold circuit significantly. Also, hot electron effect reduces the linearity of the class AB power amplifier. (C) 2010 Elsevier Ltd. All rights reserved

    Journal Title

    Microelectronics Reliability

    Volume

    50

    Issue/Number

    6

    Publication Date

    1-1-2010

    Document Type

    Article

    Language

    English

    First Page

    801

    Last Page

    806

    WOS Identifier

    WOS:000278644400008

    ISSN

    0026-2714

    Share

    COinS
     

    Accessibility Statement

    This item was created or digitized prior to April 24, 2027, or is a reproduction of legacy media created before that date. It is preserved in its original, unmodified state specifically for research, reference, or historical recordkeeping. In accordance with the ADA Title II Final Rule, the University Libraries provides accessible versions of archival materials upon request. To request an accommodation for this item, please submit an accessibility request form.