Performance Optimization of Antenna-Coupled Al/AlOx/Pt Tunnel Diode Infrared Detectors

    Authors

    J. A. Bean; A. Weeks;G. D. Boreman

    Comments

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    Abbreviated Journal Title

    IEEE J. Quantum Electron.

    Keywords

    Antennas; infrared detectors; infrared measurements; thin film devices; tunnel diodes; OXIDE-METAL DIODES; NIO-NI DIODES; POINT-CONTACT DIODE; 30 THZ; RADIATION; FILM; FREQUENCIES; JUNCTIONS; LASER; EXTENSION; DEVICES; Engineering, Electrical & Electronic; Optics; Physics, Applied

    Abstract

    Signal-to-noise ratio (SNR) is a valuable figure of merit in determining the operating scope of infrared detectors. Antenna-couple metal-oxide-metal diodes have been shown to detect infrared radiation without cooling or applied bias, but so far have been hampered by their SNR. This paper details a comprehensive study of the fabrication parameters that control the formation of the tunneling oxide barrier to optimize the performance of these detectors. Since the tunneling barrier affects both current-voltage and infrared detection characteristics, fabrication parameters can be optimized to improve device performance. The current-voltage characteristics of the devices are detailed in this paper; resistance, nonlinearity, and curvature coefficient are parameterized on fabrication procedures. Infrared detection characteristics are detailed and SNR is studied as a function of device nonlinearity and biasing conditions.

    Journal Title

    Ieee Journal of Quantum Electronics

    Volume

    47

    Issue/Number

    1

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    126

    Last Page

    135

    WOS Identifier

    WOS:000285841100007

    ISSN

    0018-9197

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