Performance of Trench Power MOSFET With Strained Si/SiGe Multilayer Channel

    Authors

    S. Sun; J. S. Yuan;Z. J. Shen

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Breakdown voltage; compressive strain; gate charge; hot electrons; power; metal-oxide-semiconductor field-effect transistor (MOSFET); SiGe; channel; specific ON-resistance; tensile strain; SIGE-CHANNEL; DEVICE SIMULATION; MOBILITY MODEL; P-MOSFETS; ELECTRON; HOLE; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    Strain engineering such as tensile-strained silicon on silicon germanium is widely used in complementary metal-oxide-semiconductor (MOS) devices to enhance carrier mobility and can potentially reduce the specific ON-resistance of trench power MOS field-effect transistors (MOSFETs). We report on the numerical study of a new trench power MOSFET structure with a strained p-type Si/SiGe superlatticelike channel region and of a process of fabricating the device. The stress distribution and the mobility enhancement inside the MOSFET structure are investigated. The breakdown voltage, the specific ON-resistance, and the gate charge of the SiGe power MOSFET are evaluated. The new SiGe-channel power MOSFET exhibits a 12% reduction in the ON-resistance while maintaining essentially the same blocking voltage and gate charge as the silicon trench power MOSFET.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    58

    Issue/Number

    5

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    1517

    Last Page

    1522

    WOS Identifier

    WOS:000289952800033

    ISSN

    0018-9383

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