A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology

    Authors

    H. C. Chiu; C. S. Cheng; H. L. Kao; J. S. Fu; Q. Cui;J. J. Liou

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    This paper presents the development of a novel ESD protected wideband low noise amplifier (LNA) using enhancement-mode (E-mode) pHEMT dual-gate clamps. The proposed novel clamp possesses a low on-state resistance, uniform parasitic capacitance, and flexibility to adjust the trigger voltage for different ESD applications. Implementation of the LNA demonstrates that RF performance can be maintained after human body mode (HBM) ESD test while at the same time endure more than +2.5 kV and -2 kV HBM ESD stress voltage. In addition, the incorporated clamps use a fewer number of diodes than the conventional diode stacks, thereby making it size efficient and low effort impedance matching co-design which allow this approach to be an attractive solution for ESD protection. (C) 2011 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    51

    Issue/Number

    12

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    2137

    Last Page

    2142

    WOS Identifier

    WOS:000298721500020

    ISSN

    0026-2714

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