Title

A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology

Authors

Authors

H. C. Chiu; C. S. Cheng; H. L. Kao; J. S. Fu; Q. Cui;J. J. Liou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Microelectron. Reliab.

Keywords

Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

This paper presents the development of a novel ESD protected wideband low noise amplifier (LNA) using enhancement-mode (E-mode) pHEMT dual-gate clamps. The proposed novel clamp possesses a low on-state resistance, uniform parasitic capacitance, and flexibility to adjust the trigger voltage for different ESD applications. Implementation of the LNA demonstrates that RF performance can be maintained after human body mode (HBM) ESD test while at the same time endure more than +2.5 kV and -2 kV HBM ESD stress voltage. In addition, the incorporated clamps use a fewer number of diodes than the conventional diode stacks, thereby making it size efficient and low effort impedance matching co-design which allow this approach to be an attractive solution for ESD protection. (C) 2011 Elsevier Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

51

Issue/Number

12

Publication Date

1-1-2011

Document Type

Article

Language

English

First Page

2137

Last Page

2142

WOS Identifier

WOS:000298721500020

ISSN

0026-2714

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