Evaluation of gate oxide breakdown effect on cascode class E power amplifier performance

    Authors

    K. Kutty; J. S. Yuan;S. Y. Chen

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    DIELECTRIC-BREAKDOWN; RELIABILITY; IMPACT; EFFICIENCY; MECHANISM; MODEL; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    A CMOS cascode class E power amplifier has been designed at 5.2 GHz. Its RF performances such as output and power-added efficiency have been examined in ADS simulation. The layout parasitic is accounted for in the post-layout simulation. Time-dependent drain-source voltage waveforms indicate that the drain of cascode transistor is subject to much higher voltage stress than that of main transistor. Analytical equation of output power including impact of gate-oxide breakdown is developed and compared with RF simulation results. Good agreement between the model predictions and ADS simulation is obtained. The gate-drain breakdown of the cascode transistor decreases the output power and power-added efficiency of the power amplifier significantly when the breakdown resistance is below 1 k Omega. (C) 2011 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    51

    Issue/Number

    8

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    1302

    Last Page

    1308

    WOS Identifier

    WOS:000293106600004

    ISSN

    0026-2714

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