Title
Evaluation of gate oxide breakdown effect on cascode class E power amplifier performance
Abbreviated Journal Title
Microelectron. Reliab.
Keywords
DIELECTRIC-BREAKDOWN; RELIABILITY; IMPACT; EFFICIENCY; MECHANISM; MODEL; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
Abstract
A CMOS cascode class E power amplifier has been designed at 5.2 GHz. Its RF performances such as output and power-added efficiency have been examined in ADS simulation. The layout parasitic is accounted for in the post-layout simulation. Time-dependent drain-source voltage waveforms indicate that the drain of cascode transistor is subject to much higher voltage stress than that of main transistor. Analytical equation of output power including impact of gate-oxide breakdown is developed and compared with RF simulation results. Good agreement between the model predictions and ADS simulation is obtained. The gate-drain breakdown of the cascode transistor decreases the output power and power-added efficiency of the power amplifier significantly when the breakdown resistance is below 1 k Omega. (C) 2011 Elsevier Ltd. All rights reserved.
Journal Title
Microelectronics Reliability
Volume
51
Issue/Number
8
Publication Date
1-1-2011
Document Type
Article
Language
English
First Page
1302
Last Page
1308
WOS Identifier
ISSN
0026-2714
Recommended Citation
"Evaluation of gate oxide breakdown effect on cascode class E power amplifier performance" (2011). Faculty Bibliography 2010s. 1512.
https://stars.library.ucf.edu/facultybib2010/1512
Comments
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