Evaluation of Lateral Power MOSFETs in a Synchronous Buck Converter Using a Mixed-Mode Device and Circuit Simulation

    Authors

    B. Yang; J. S. Yuan;Z. J. Shen

    Comments

    Authors: contact us about adding a copy of your work at [email protected]

    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Body diode loss; buck converter; conduction loss; heavy ion radiation; hot electron; impact ionization; laterally double-diffused MOS (LDMOS); mixed-mode simulation; R(DS(ON)); reliability; switching loss; CHARGE COLLECTION; MOBILITY MODEL; DEGRADATION; TRANSISTORS; DEPENDENCE; ELECTRON; BURNOUT; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    This paper presents an evaluation of laterally double-diffused MOS transistors in synchronous dc-dc buck converters using a physical-based mixed device and circuit simulation. It is observed that impact ionization of the low-side transistor can be very high after the dead-time drain overshoot voltage point. In addition, heavy ion irradiation degrades power MOSFET performance and may lead to a potential circuit malfunction due to a significant increase in transient current if heavy ions strike the dc-dc buck converter at a critical time during switching.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    58

    Issue/Number

    11

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    4004

    Last Page

    4010

    WOS Identifier

    WOS:000296099400047

    ISSN

    0018-9383

    Share

    COinS
     

    Accessibility Statement

    This item was created or digitized prior to April 24, 2027, or is a reproduction of legacy media created before that date. It is preserved in its original, unmodified state specifically for research, reference, or historical recordkeeping. In accordance with the ADA Title II Final Rule, the University Libraries provides accessible versions of archival materials upon request. To request an accommodation for this item, please submit an accessibility request form.