Evaluation of Lateral Power MOSFETs in a Synchronous Buck Converter Using a Mixed-Mode Device and Circuit Simulation

    Authors

    B. Yang; J. S. Yuan;Z. J. Shen

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Body diode loss; buck converter; conduction loss; heavy ion radiation; hot electron; impact ionization; laterally double-diffused MOS (LDMOS); mixed-mode simulation; R(DS(ON)); reliability; switching loss; CHARGE COLLECTION; MOBILITY MODEL; DEGRADATION; TRANSISTORS; DEPENDENCE; ELECTRON; BURNOUT; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    This paper presents an evaluation of laterally double-diffused MOS transistors in synchronous dc-dc buck converters using a physical-based mixed device and circuit simulation. It is observed that impact ionization of the low-side transistor can be very high after the dead-time drain overshoot voltage point. In addition, heavy ion irradiation degrades power MOSFET performance and may lead to a potential circuit malfunction due to a significant increase in transient current if heavy ions strike the dc-dc buck converter at a critical time during switching.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    58

    Issue/Number

    11

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    4004

    Last Page

    4010

    WOS Identifier

    WOS:000296099400047

    ISSN

    0018-9383

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