Title

Thermal reliability of VCO using InGaP/GaAs HBTs

Authors

Authors

X. Liu; J. S. Yuan;J. J. Liou

Comments

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Abbreviated Journal Title

Microelectron. Reliab.

Keywords

HETEROJUNCTION BIPOLAR-TRANSISTOR; OSCILLATORS; TECHNOLOGY; DEVICE; NOISE; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

Degradations of InGaP/GaAs heterojunction bipolar transistor (HBT) collector current and base current subjected to cumulative long-term junction temperature stress are examined experimentally. The aged SPICE model parameters as a function of stress time are extracted from the measurement data. The VCO phase noise, tuning range, and output amplitude are studied in circuit simulation. The phase noise increases, tuning range and output amplitude decrease with increasing junction temperature. (C) 2011 Elsevier Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

51

Issue/Number

12

Publication Date

1-1-2011

Document Type

Article

Language

English

First Page

2147

Last Page

2152

WOS Identifier

WOS:000298721500022

ISSN

0026-2714

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