Thermal reliability of VCO using InGaP/GaAs HBTs

    Authors

    X. Liu; J. S. Yuan;J. J. Liou

    Comments

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    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    HETEROJUNCTION BIPOLAR-TRANSISTOR; OSCILLATORS; TECHNOLOGY; DEVICE; NOISE; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    Degradations of InGaP/GaAs heterojunction bipolar transistor (HBT) collector current and base current subjected to cumulative long-term junction temperature stress are examined experimentally. The aged SPICE model parameters as a function of stress time are extracted from the measurement data. The VCO phase noise, tuning range, and output amplitude are studied in circuit simulation. The phase noise increases, tuning range and output amplitude decrease with increasing junction temperature. (C) 2011 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    51

    Issue/Number

    12

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    2147

    Last Page

    2152

    WOS Identifier

    WOS:000298721500022

    ISSN

    0026-2714

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