CMOS RF Power Amplifier Variability and Reliability Resilient Biasing Design and Analysis

    Authors

    Y. D. Liu;J. S. Yuan

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Hot electron; Monte Carlo simulation; positive bias temperature; instability (PBTI); power amplifier (PA); random doping fluctuation; reliability; variability; INTERFACE-TRAP GENERATION; MOS-TRANSISTORS; GATE OXIDE; FLUCTUATIONS; DEGRADATION; BREAKDOWN; SUBJECT; DEVICES; PBTI; NBTI; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    This paper presents a novel biasing design that makes the complementary metal-oxide-semiconductor radio frequency power amplifier (PA) resilient to process variability and device reliability. The biasing scheme provides resilience through the threshold voltage adjustment, and at the mean time, it does not degrade the PA performance. Analytical equations are derived for studying the resilient biasing on PA process sensitivity. A class-AB PA with a resilient design is compared with a PA without such a design using a Predictive Technology Model 65-nm technology. The Advanced Design System simulation results show that the resilient biasing design helps improve the robustness of the PA in P(1dB), P(sat), and power-added efficiency. Except for postfabrication calibration capability, the adaptive body biasing design reduces the impact of variability and reliability on PA significantly when subjected to threshold voltage shift and electron mobility degradation.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    58

    Issue/Number

    2

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    540

    Last Page

    546

    WOS Identifier

    WOS:000286515400037

    ISSN

    0018-9383

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