Title

CMOS RF Power Amplifier Variability and Reliability Resilient Biasing Design and Analysis

Authors

Authors

Y. D. Liu;J. S. Yuan

Comments

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Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

Hot electron; Monte Carlo simulation; positive bias temperature; instability (PBTI); power amplifier (PA); random doping fluctuation; reliability; variability; INTERFACE-TRAP GENERATION; MOS-TRANSISTORS; GATE OXIDE; FLUCTUATIONS; DEGRADATION; BREAKDOWN; SUBJECT; DEVICES; PBTI; NBTI; Engineering, Electrical & Electronic; Physics, Applied

Abstract

This paper presents a novel biasing design that makes the complementary metal-oxide-semiconductor radio frequency power amplifier (PA) resilient to process variability and device reliability. The biasing scheme provides resilience through the threshold voltage adjustment, and at the mean time, it does not degrade the PA performance. Analytical equations are derived for studying the resilient biasing on PA process sensitivity. A class-AB PA with a resilient design is compared with a PA without such a design using a Predictive Technology Model 65-nm technology. The Advanced Design System simulation results show that the resilient biasing design helps improve the robustness of the PA in P(1dB), P(sat), and power-added efficiency. Except for postfabrication calibration capability, the adaptive body biasing design reduces the impact of variability and reliability on PA significantly when subjected to threshold voltage shift and electron mobility degradation.

Journal Title

Ieee Transactions on Electron Devices

Volume

58

Issue/Number

2

Publication Date

1-1-2011

Document Type

Article

Language

English

First Page

540

Last Page

546

WOS Identifier

WOS:000286515400037

ISSN

0018-9383

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