CMOS RF Low-Noise Amplifier Design for Variability and Reliability

    Authors

    Y. D. Liu;J. S. Yuan

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Device Mater. Reliab.

    Keywords

    Adaptive body bias; design for reliability (DFR); low-noise amplifier; (LNA); Monte Carlo simulation; noise figure; radio frequency (RF); small-signal model; variability; GATE OXIDE; BREAKDOWN; DEVICES; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    An adaptive substrate (body) bias design for variability and reliability for a CMOS low-noise amplifier (LNA) is analyzed. The proposed body biasing scheme provides a radio-frequency circuit that is resilient to process variations and device reliability. Small-signal models including substrate bias effect are developed for noise figure and small-signal power gain sensitivity. The cascode LNA operating at 24 GHz with the adaptive substrate bias scheme is compared with the LNA without body bias using the PTM 65-nm technology. The modeling and simulation results show that the adaptive substrate bias reduces the sensitivity of noise figure and minimum noise figure subject to process variations and device aging such as threshold voltage shift and electron mobility degradation.

    Journal Title

    Ieee Transactions on Device and Materials Reliability

    Volume

    11

    Issue/Number

    3

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    450

    Last Page

    457

    WOS Identifier

    WOS:000294856900012

    ISSN

    1530-4388

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