Title

CMOS RF Low-Noise Amplifier Design for Variability and Reliability

Authors

Authors

Y. D. Liu;J. S. Yuan

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Trans. Device Mater. Reliab.

Keywords

Adaptive body bias; design for reliability (DFR); low-noise amplifier; (LNA); Monte Carlo simulation; noise figure; radio frequency (RF); small-signal model; variability; GATE OXIDE; BREAKDOWN; DEVICES; Engineering, Electrical & Electronic; Physics, Applied

Abstract

An adaptive substrate (body) bias design for variability and reliability for a CMOS low-noise amplifier (LNA) is analyzed. The proposed body biasing scheme provides a radio-frequency circuit that is resilient to process variations and device reliability. Small-signal models including substrate bias effect are developed for noise figure and small-signal power gain sensitivity. The cascode LNA operating at 24 GHz with the adaptive substrate bias scheme is compared with the LNA without body bias using the PTM 65-nm technology. The modeling and simulation results show that the adaptive substrate bias reduces the sensitivity of noise figure and minimum noise figure subject to process variations and device aging such as threshold voltage shift and electron mobility degradation.

Journal Title

Ieee Transactions on Device and Materials Reliability

Volume

11

Issue/Number

3

Publication Date

1-1-2011

Document Type

Article

Language

English

First Page

450

Last Page

457

WOS Identifier

WOS:000294856900012

ISSN

1530-4388

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