Evaluation of Lateral Power MOSFETs in a Synchronous Buck Converter Using a Mixed-Mode Device and Circuit Simulation
Abbreviated Journal Title
IEEE Trans. Electron Devices
Body diode loss; buck converter; conduction loss; heavy ion radiation; hot electron; impact ionization; laterally double-diffused MOS (LDMOS); mixed-mode simulation; R(DS(ON)); reliability; switching loss; CHARGE COLLECTION; MOBILITY MODEL; DEGRADATION; TRANSISTORS; DEPENDENCE; ELECTRON; BURNOUT; Engineering, Electrical & Electronic; Physics, Applied
This paper presents an evaluation of laterally double-diffused MOS transistors in synchronous dc-dc buck converters using a physical-based mixed device and circuit simulation. It is observed that impact ionization of the low-side transistor can be very high after the dead-time drain overshoot voltage point. In addition, heavy ion irradiation degrades power MOSFET performance and may lead to a potential circuit malfunction due to a significant increase in transient current if heavy ions strike the dc-dc buck converter at a critical time during switching.
Ieee Transactions on Electron Devices
"Evaluation of Lateral Power MOSFETs in a Synchronous Buck Converter Using a Mixed-Mode Device and Circuit Simulation" (2011). Faculty Bibliography 2010s. 2143.