Title

NBTI reliability on high-k metal-gate SiGe transistor and circuit performances

Authors

Authors

J. S. Yuan; W. K. Yeh; S. Y. Chen;C. W. Hsu

Comments

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Abbreviated Journal Title

Microelectron. Reliab.

Keywords

GENERATION; MOSFETS; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

Negative-bias temperature instability (NBTI) on high-k metal-gate SiGe p-channel MOSFETs has been examined. SiGe p-MOSFETs shows reduced interface states and enhanced NBTI reliability compared to their Si p-channel control devices as evidenced by experimental data. Impact of NBTI reliability on digital and RF circuits has been also examined using extracted fresh and stressed BSIM4 model parameters in circuit simulation. High-k metal-gate SiGe pMOSFETs demonstrate less inverter pull-up delay, smaller noise figure of a cascode low-noise amplifier, and larger output power and power-added efficiency than their Si counterparts when subject to NBTI stress. (C) 2010 Elsevier Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

51

Issue/Number

5

Publication Date

1-1-2011

Document Type

Article

Language

English

First Page

914

Last Page

918

WOS Identifier

WOS:000290245700008

ISSN

0026-2714

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