NBTI reliability on high-k metal-gate SiGe transistor and circuit performances

    Authors

    J. S. Yuan; W. K. Yeh; S. Y. Chen;C. W. Hsu

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    GENERATION; MOSFETS; Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    Negative-bias temperature instability (NBTI) on high-k metal-gate SiGe p-channel MOSFETs has been examined. SiGe p-MOSFETs shows reduced interface states and enhanced NBTI reliability compared to their Si p-channel control devices as evidenced by experimental data. Impact of NBTI reliability on digital and RF circuits has been also examined using extracted fresh and stressed BSIM4 model parameters in circuit simulation. High-k metal-gate SiGe pMOSFETs demonstrate less inverter pull-up delay, smaller noise figure of a cascode low-noise amplifier, and larger output power and power-added efficiency than their Si counterparts when subject to NBTI stress. (C) 2010 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    51

    Issue/Number

    5

    Publication Date

    1-1-2011

    Document Type

    Article

    Language

    English

    First Page

    914

    Last Page

    918

    WOS Identifier

    WOS:000290245700008

    ISSN

    0026-2714

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