NLDMOS ESD Scaling Under Human Metal Model for 40-V Mixed-Signal Applications

    Authors

    S. Malobabic; J. A. Salcedo; J. J. Hajjar;J. J. Liou

    Comments

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    Abbreviated Journal Title

    IEEE Electron Device Lett.

    Keywords

    Electrostatic discharge (ESD); human metal model (HMM); laterally; diffused MOS (LDMOS); Engineering, Electrical & Electronic

    Abstract

    Electrostatic discharge (ESD) robustness of LDMOS (laterally diffused MOS) devices is found to be highly dependent on the type of ESD stress. In particular, the device's ESD robustness does not scale with the device width, and this condition is substantially aggravated during the International Electrotechnical Commission (IEC) 61000-4-2 stress condition. IEC 61000-4-2 is a system-level ESD standard increasingly being adopted in the industry for ESD robustness assessment at the integrated circuit level. A comprehensive evaluation under the IEC 61000-4-2 stress impacting precision circuit designs is introduced in this letter for variable width LDMOS devices fabricated in a 0.18-mu m bipolar-CMOS-DMOS process for 40-V mixed-signal applications.

    Journal Title

    Ieee Electron Device Letters

    Volume

    33

    Issue/Number

    11

    Publication Date

    1-1-2012

    Document Type

    Article

    Language

    English

    First Page

    1595

    Last Page

    1597

    WOS Identifier

    WOS:000310387100028

    ISSN

    0741-3106

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