Title

High yield fabrication of chemically reduced graphene oxide field effect transistors by dielectrophoresis

Authors

Authors

D. Joung; A. Chunder; L. Zhai;S. I. Khondaker

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Nanotechnology

Keywords

LARGE-AREA; ELECTRICAL-CONDUCTIVITY; TRANSPARENT CONDUCTORS; VAPOR-DEPOSITION; GRAPHITE OXIDE; FILMS; SHEETS; REDUCTION; ROUTE; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied

Abstract

We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets. The RGO sheets suspended in water were assembled between prefabricated gold source and drain electrodes using ac dielectrophoresis. With the application of a backgate voltage, 60% of the devices showed p-type FET behavior, while the remaining 40% showed ambipolar behavior. After mild thermal annealing at 200 degrees C, all ambipolar RGO FET remained ambipolar with increased hole and electron mobility, while 60% of the p-type RGO devices were transformed to ambipolar. The maximum hole and electron mobilities of the devices were 4.0 and 1.5 cm(2) V(-1) s(-1) respectively. High yield assembly of chemically derived RGO FET will have significant impact in scaled up fabrication of graphene based nanoelectronic devices.

Journal Title

Nanotechnology

Volume

21

Issue/Number

16

Publication Date

1-1-2010

Document Type

Article

Language

English

First Page

5

WOS Identifier

WOS:000276111200005

ISSN

0957-4484

Share

COinS