CMOS Transistor Amplifier Temperature Compensation: Modeling and Analysis

    Authors

    Y. Y. Zhang;J. S. Yuan

    Comments

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    Abbreviated Journal Title

    IEEE Trans. Device Mater. Reliab.

    Keywords

    Gate biasing; low-noise amplifier (LNA); noise figure; temperature; compensation; variability; POWER-AMPLIFIER; MOBILITY; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    The effect of temperature variations on a cascode low-noise MOS amplifier is analyzed. A gate biasing scheme for temperature compensation is illustrated. RF circuit simulation results show that the low-noise amplifier with temperature compensation can reduce temperature variation effect on the noise figure of the amplifier over a wide range of temperatures. Analytical equations to predict temperature compensation effect are also presented.

    Journal Title

    Ieee Transactions on Device and Materials Reliability

    Volume

    12

    Issue/Number

    2

    Publication Date

    1-1-2012

    Document Type

    Article

    Language

    English

    First Page

    376

    Last Page

    381

    WOS Identifier

    WOS:000305085100025

    ISSN

    1530-4388

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