Title

CMOS Transistor Amplifier Temperature Compensation: Modeling and Analysis

Authors

Authors

Y. Y. Zhang;J. S. Yuan

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Trans. Device Mater. Reliab.

Keywords

Gate biasing; low-noise amplifier (LNA); noise figure; temperature; compensation; variability; POWER-AMPLIFIER; MOBILITY; Engineering, Electrical & Electronic; Physics, Applied

Abstract

The effect of temperature variations on a cascode low-noise MOS amplifier is analyzed. A gate biasing scheme for temperature compensation is illustrated. RF circuit simulation results show that the low-noise amplifier with temperature compensation can reduce temperature variation effect on the noise figure of the amplifier over a wide range of temperatures. Analytical equations to predict temperature compensation effect are also presented.

Journal Title

Ieee Transactions on Device and Materials Reliability

Volume

12

Issue/Number

2

Publication Date

1-1-2012

Document Type

Article

DOI Link

http://dx.doi.org/10.1109/tdmr.2011.2180388

Language

English

First Page

376

Last Page

381

WOS Identifier

WOS:000305085100025

ISSN

1530-4388

Recommended Citation

"CMOS Transistor Amplifier Temperature Compensation: Modeling and Analysis" (2012). Faculty Bibliography 2010s. 3557.
https://stars.library.ucf.edu/facultybib2010/3557