Novel ESD protection solution for single-ended mixer in GaAs pHEMT technology

    Authors

    Q. Cui; S. Y. Zhang;J. J. Liou

    Comments

    Authors: contact us about adding a copy of your work at [email protected]

    Abbreviated Journal Title

    Microelectron. Reliab.

    Keywords

    Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

    Abstract

    This paper develops an improved electrostatic discharge (ESD) protection solution built with a novel dual-gate, depletion-mode pHEMT device in the GaAs technology. The successful implementation of this ESD clamp in a single ended passive RF mixer with a Human Body Model (HBM) ESD protection level of over 1.8 kV is also demonstrated. The ESD protected mixer is also shown to maintain its RF integrity with only a minimal degradation in the conversion loss and noise figure. (c) 2013 Elsevier Ltd. All rights reserved.

    Journal Title

    Microelectronics Reliability

    Volume

    53

    Issue/Number

    7

    Publication Date

    1-1-2013

    Document Type

    Article

    Language

    English

    First Page

    952

    Last Page

    955

    WOS Identifier

    WOS:000320841500004

    ISSN

    0026-2714

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