Title

Novel ESD protection solution for single-ended mixer in GaAs pHEMT technology

Authors

Authors

Q. Cui; S. Y. Zhang;J. J. Liou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

Microelectron. Reliab.

Keywords

Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied

Abstract

This paper develops an improved electrostatic discharge (ESD) protection solution built with a novel dual-gate, depletion-mode pHEMT device in the GaAs technology. The successful implementation of this ESD clamp in a single ended passive RF mixer with a Human Body Model (HBM) ESD protection level of over 1.8 kV is also demonstrated. The ESD protected mixer is also shown to maintain its RF integrity with only a minimal degradation in the conversion loss and noise figure. (c) 2013 Elsevier Ltd. All rights reserved.

Journal Title

Microelectronics Reliability

Volume

53

Issue/Number

7

Publication Date

1-1-2013

Document Type

Article

DOI Link

http://dx.doi.org/10.1016/j.microrel.2013.03.013

Language

English

First Page

952

Last Page

955

WOS Identifier

WOS:000320841500004

ISSN

0026-2714

Recommended Citation

"Novel ESD protection solution for single-ended mixer in GaAs pHEMT technology" (2013). Faculty Bibliography 2010s. 3851.
https://stars.library.ucf.edu/facultybib2010/3851