Influence of precursor gas ratio and firing on silicon surface passivation by APCVD aluminium oxide

    Authors

    K. O. Davis; K. Y. Jiang; M. Wilson; C. Demberger; H. Zunft; H. Haverkamp; D. Habermann;W. V. Schoenfeld

    Comments

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    Abbreviated Journal Title

    Phys. Status Solidi-Rapid Res. Lett.

    Keywords

    atmospheric pressure CVD; silicon; passivation; aluminum oxide; CHEMICAL-VAPOR-DEPOSITION; ATOMIC-LAYER DEPOSITION; SOLAR-CELLS; AL2O3; SEMICONDUCTORS; TEMPERATURE; MORPHOLOGY; PECVD; ALD; Materials Science, Multidisciplinary; Physics, Applied; Physics, ; Condensed Matter

    Abstract

    Using a high throughput, in-line atmosphere chemical vapor deposition (APCVD) tool, we have synthesized amorphous aluminum oxide (AlOx) films from precursors of trimethyl-aluminum (TMA) and O-2, yielding a maximum deposition 150 nm min(-1) per wafer. For p-type crystalline silicon (c-Si) wafers, excellent surface passivation was achieved with the APCVD AlOx films, with a best maximum effective surface recombination velocity (S-eff,S-max) of 8 cm/s following a standard industrial firing step. The findings could be attributed to the existence of large negative charge (Q(f) approximate to -3 x 10(12) cm(-2)) and low interface defect density (D-it approximate to 4 x 10(11) eV(-1) cm(-2)) achieved by the films. This data demonstrates a high potential for APCVD AlOx to be used in high efficiency, low cost industrial solar cells. ((c) 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

    Journal Title

    Physica Status Solidi-Rapid Research Letters

    Volume

    7

    Issue/Number

    11

    Publication Date

    1-1-2013

    Document Type

    Article

    Language

    English

    First Page

    942

    Last Page

    945

    WOS Identifier

    WOS:000328321700002

    ISSN

    1862-6254

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