Title

Evaluation of Transient Behavior of Polysilicon-Bound Diode for Fast ESD Applications

Authors

Authors

Y. Li;J. J. Liou

Comments

Authors: contact us about adding a copy of your work at STARS@ucf.edu

Abbreviated Journal Title

IEEE Trans. Electron Devices

Keywords

Diodes; ESD; transient behavior; VFTLP; Engineering, Electrical & Electronic; Physics, Applied

Abstract

Transient behaviors of poly-bound diodes subject to pulses generated by the very fast transmission line pulsing (VFTLP) tester are characterized for fast ESD events such as the charged device model. The effects of changing a diode's dimension parameters on the transient behaviors and on the overshoot voltage and turn-on time are studied. The correlation between the diode failure and polygate configuration under the VFTLP stress is also investigated.

Journal Title

Ieee Transactions on Electron Devices

Volume

57

Issue/Number

10

Publication Date

1-1-2010

Document Type

Article

DOI Link

http://dx.doi.org/10.1109/ted.2010.2063032

Language

English

First Page

2736

Last Page

2743

WOS Identifier

WOS:000283346500050

ISSN

0018-9383

Recommended Citation

"Evaluation of Transient Behavior of Polysilicon-Bound Diode for Fast ESD Applications" (2010). Faculty Bibliography 2010s. 431.
https://stars.library.ucf.edu/facultybib2010/431