Evaluation of Transient Behavior of Polysilicon-Bound Diode for Fast ESD Applications

    Authors

    Y. Li;J. J. Liou

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Electron Devices

    Keywords

    Diodes; ESD; transient behavior; VFTLP; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    Transient behaviors of poly-bound diodes subject to pulses generated by the very fast transmission line pulsing (VFTLP) tester are characterized for fast ESD events such as the charged device model. The effects of changing a diode's dimension parameters on the transient behaviors and on the overshoot voltage and turn-on time are studied. The correlation between the diode failure and polygate configuration under the VFTLP stress is also investigated.

    Journal Title

    Ieee Transactions on Electron Devices

    Volume

    57

    Issue/Number

    10

    Publication Date

    1-1-2010

    Document Type

    Article

    Language

    English

    First Page

    2736

    Last Page

    2743

    WOS Identifier

    WOS:000283346500050

    ISSN

    0018-9383

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