Title
Power amplifier resilient design for process, voltage, and temperature variations
Abbreviated Journal Title
Microelectron. Reliab.
Keywords
Engineering, Electrical & Electronic; Nanoscience & Nanotechnology; Physics, Applied
Abstract
This paper presents RF power amplifier adaptive body bias compensation technique for output power and power-added efficiency resilient to process, supply voltage, and temperature (PVT) variations. The adaptive body biasing scheme uses a current source for PVT sensing to provide resilience through the threshold voltage adjustment to maintain power amplifier performance over a wide range of variability. Analytical equations are derived for physical insight. ADS simulation results show that the resilient body biasing design improves the robustness of the power amplifier in output power and power-added efficiency over process, supply voltage, and temperature variations. (C) 2013 Elsevier Ltd. All rights reserved.
Journal Title
Microelectronics Reliability
Volume
53
Issue/Number
6
Publication Date
1-1-2013
Document Type
Article
Language
English
First Page
856
Last Page
860
WOS Identifier
ISSN
0026-2714
Recommended Citation
"Power amplifier resilient design for process, voltage, and temperature variations" (2013). Faculty Bibliography 2010s. 4910.
https://stars.library.ucf.edu/facultybib2010/4910
Comments
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