Highly sensitive palladium oxide thin film extended gate FETs as pH sensor

    Authors

    A. Das; D. H. Ko; C. H. Chen; L. B. Chang; C. S. Lai; F. C. Chu; L. Chow;R. M. Lin

    Comments

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    Abbreviated Journal Title

    Sens. Actuator B-Chem.

    Keywords

    EGFET; Palladium oxide; pH sensor; Super-Nernstian sensitivity; FIELD-EFFECT TRANSISTOR; IRIDIUM OXIDE; ISFET; HYSTERESIS; SURFACE; DRIFT; FABRICATION; ELECTRODE; DIOXIDE; SYSTEM; Chemistry, Analytical; Electrochemistry; Instruments & Instrumentation

    Abstract

    It is well-known that palladium readily absorbs hydrogen gas at room temperature. Based on this unique property of palladium, palladium oxide (PdO)-sensitive membrane in the extended gate field-effect transistor (EGFET) configurations have been evaluated as a detector for hydrogen ions in pH buffer solutions. The PdO thin film was prepared by a two-step process through reactive electron beam evaporation and subsequent thermal oxidation in an optimal O-2 flow. Our results indicate that the PdO-based EGFET sensor showed super-Nernstian sensitivity approximately 62.87 mV/pH, while exhibiting good linearity as well as good stability between pH 2 and pH 12. Our research demonstrates that PdO membrane can be used in EGFET structure without compromising sensitivity achieved by conventional methods. Furthermore, the disposable PdO sensor shows great potential for low cost biochemical detection due to its simplified fabrication and measurement system. (C) 2014 Elsevier B.V. All rights reserved.

    Journal Title

    Sensors and Actuators B-Chemical

    Volume

    205

    Publication Date

    1-1-2014

    Document Type

    Article

    Language

    English

    First Page

    199

    Last Page

    205

    WOS Identifier

    WOS:000343117600026

    ISSN

    0925-4005

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