Title
Surface potential calculation and drain current model for junctionless double-gate polysilicon TFTs
Abbreviated Journal Title
AIP Adv.
Keywords
TRANSISTORS; MOSFETS; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied
Abstract
Surface potential is a key parameter in evaluating the DC property of thin-film transistors (TFTs). In this paper, for the junctionless symmetric double-gate polysilicon TFTs, a physical-based explicit calculation to surface potential has been derived. Incorporating impurity concentration, mobile charge and trap density into Poisson's equation, a closed form of band bending as a function of gate voltage is obtained and demonstrated as an accurate and computationally efficient solution. Based on surface potential, a drain current model for long-channel devices is provided in explicit forms. Furthermore, it is verified successfully by comparisons with both 2D numerical simulation and experimental data in different operation regions.
Journal Title
Aip Advances
Volume
4
Issue/Number
8
Publication Date
1-1-2014
Document Type
Article
DOI Link
Language
English
First Page
12
WOS Identifier
ISSN
2158-3226
Recommended Citation
Deng, W.; Ma, X.; and Huang, J., "Surface potential calculation and drain current model for junctionless double-gate polysilicon TFTs" (2014). Faculty Bibliography 2010s. 5246.
https://stars.library.ucf.edu/facultybib2010/5246
Comments
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