Authors

W. Deng; X. Ma;J. Huang

Comments

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Abbreviated Journal Title

AIP Adv.

Keywords

TRANSISTORS; MOSFETS; Nanoscience & Nanotechnology; Materials Science, Multidisciplinary; Physics, Applied

Abstract

Surface potential is a key parameter in evaluating the DC property of thin-film transistors (TFTs). In this paper, for the junctionless symmetric double-gate polysilicon TFTs, a physical-based explicit calculation to surface potential has been derived. Incorporating impurity concentration, mobile charge and trap density into Poisson's equation, a closed form of band bending as a function of gate voltage is obtained and demonstrated as an accurate and computationally efficient solution. Based on surface potential, a drain current model for long-channel devices is provided in explicit forms. Furthermore, it is verified successfully by comparisons with both 2D numerical simulation and experimental data in different operation regions.

Journal Title

Aip Advances

Volume

4

Issue/Number

8

Publication Date

1-1-2014

Document Type

Article

Language

English

First Page

12

WOS Identifier

WOS:000342808900007

ISSN

2158-3226

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