Title

Correlation Between TLP, HMM, and System-Level ESD Pulses for Cu Metallization

Authors

Authors

Y. Xi; S. Malobabic; V. Vashchenko;J. Liou

Comments

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Abbreviated Journal Title

IEEE Trans. Device Mater. Reliab.

Keywords

Back end of line (BEOL); ESD; IEC system level; Engineering, Electrical & Electronic; Physics, Applied

Abstract

Correlation factors between different ESD pulse types for different back-end-of-line (BEOL) metal-line topologies have been studied to support system-level on-chip ESD design. The component level (HMM, HBM, and TLP on a wafer) and system-level (IEC gun contact on package) ESD stresses were correlated followed by extraction of correlation factors between the IEC/HMM and TLP, as well as the HBM and TLP supported by analytical approximation. The major conclusions were verified using the thermal coupled mixed-mode simulation analysis.

Journal Title

Ieee Transactions on Device and Materials Reliability

Volume

14

Issue/Number

1

Publication Date

1-1-2014

Document Type

Article

Language

English

First Page

446

Last Page

450

WOS Identifier

WOS:000335226600060

ISSN

1530-4388

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