Correlation Between TLP, HMM, and System-Level ESD Pulses for Cu Metallization

    Authors

    Y. Xi; S. Malobabic; V. Vashchenko;J. Liou

    Comments

    Authors: contact us about adding a copy of your work at STARS@ucf.edu

    Abbreviated Journal Title

    IEEE Trans. Device Mater. Reliab.

    Keywords

    Back end of line (BEOL); ESD; IEC system level; Engineering, Electrical & Electronic; Physics, Applied

    Abstract

    Correlation factors between different ESD pulse types for different back-end-of-line (BEOL) metal-line topologies have been studied to support system-level on-chip ESD design. The component level (HMM, HBM, and TLP on a wafer) and system-level (IEC gun contact on package) ESD stresses were correlated followed by extraction of correlation factors between the IEC/HMM and TLP, as well as the HBM and TLP supported by analytical approximation. The major conclusions were verified using the thermal coupled mixed-mode simulation analysis.

    Journal Title

    Ieee Transactions on Device and Materials Reliability

    Volume

    14

    Issue/Number

    1

    Publication Date

    1-1-2014

    Document Type

    Article

    Language

    English

    First Page

    446

    Last Page

    450

    WOS Identifier

    WOS:000335226600060

    ISSN

    1530-4388

    Share

    COinS