Abbreviated Journal Title
Appl. Phys. Lett.
Keywords
excited states; ground states; laser variables measurement; light; interferometry; optical dispersion; quantum dot lasers; semiconductor; optical amplifiers; wavelet transforms; WAVELET-TRANSFORM ANALYSIS; GROUP DELAY; INTERFEROMETRY; LASERS; Physics, Applied
Abstract
Group delay and higher order dispersion measurements are conducted on a 1.3 mu m quantum dot semiconductor optical amplifier at various injection currents. White-light spectral interferometry is performed, along with a wavelet transform to recover the group delay. The group delay, group velocity dispersion, and higher order dispersion terms are quantified. The measurement spans both ground state and first excited state transitions, ranging from 1200 to 1320 nm. The group velocity dispersion, beta(2), is found to be -6.3x10(3) fs(2) (7.6 fs/nm) at an injection current of 500 mA.
Journal Title
Applied Physics Letters
Volume
96
Issue/Number
21
Publication Date
1-1-2010
Document Type
Article
DOI Link
Language
English
First Page
3
WOS Identifier
ISSN
0003-6951
Recommended Citation
Bagnell, M.; Davilla-Rodriguez, J.; Ardey, A.; and Delfyett, P. J., "Dispersion measurements of a 1.3 mu m quantum dot semiconductor optical amplifier over 120 nm of spectral bandwidth" (2010). Faculty Bibliography 2010s. 6968.
https://stars.library.ucf.edu/facultybib2010/6968
Comments
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