Title
Investigation of chemical bath deposition of CdO thin films using three different complexing agents
Abbreviated Journal Title
Appl. Surf. Sci.
Keywords
CdO; Thin films; Group II-VI Semiconductors; Chemical bath deposition; SOLUTION GROWTH TECHNIQUE; CADMIUM-OXIDE FILMS; PHYSICAL-PROPERTIES; DOPED CDO; ZNSE; PRESSURE; LAYERS; CDSE; Chemistry, Physical; Materials Science, Coatings & Films; Physics, ; Applied; Physics, Condensed Matter
Abstract
Chemical bath deposition of CdO thin films using three different complexing agents, namely ammonia, ethanolamine, and methylamine is investigated. CdSO4 is used as Cd precursor, while H2O2 is used as an oxidation agent. As-grown films are mainly cubic CdO2, with some Cd(OH)(2) as well as CdO phases being detected. Annealing at 400 degrees C in air for 1 h transforms films into cubic CdO. The calculated optical band gap of as-grown films is in the range of 3.37-4.64 eV. Annealed films have a band gap of about 2.53 eV. Rutherford backscattering spectroscopy of as-grown films reveals cadmium to oxygen ratio of 1.00: 1.74 +/- 0.01 while much better stoichiometry is obtained after annealing, in accordance with the X-ray diffraction results. A carrier density as high as 1.89 x 10(20) cm(-3) and a resistivity as low as 1.04 x 10(-2) Omega-cm are obtained. (C) 2011 Elsevier B.V. All rights reserved.
Journal Title
Applied Surface Science
Volume
257
Issue/Number
22
Publication Date
1-1-2011
Document Type
Article
Language
English
First Page
9237
Last Page
9242
WOS Identifier
ISSN
0169-4332
Recommended Citation
"Investigation of chemical bath deposition of CdO thin films using three different complexing agents" (2011). Faculty Bibliography 2010s. 7069.
https://stars.library.ucf.edu/facultybib2010/7069
Comments
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