Title
Evaluating Defects in Solution-Processed Carbon Nanotube Devices via Low-Temperature Transport Spectroscopy
Abbreviated Journal Title
ACS Nano
Keywords
solution-processed; single electron transistor; nanotube; electron; transport; transport spectroscopy; defects; FIELD-EFFECT TRANSISTORS; QUANTUM DOTS; ELECTRICAL-TRANSPORT; RAMAN-SPECTROSCOPY; ROOM-TEMPERATURE; COULOMB-BLOCKADE; Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience &; Nanotechnology; Materials Science, Multidisciplinary
Abstract
We performed low-temperature electron transport spectroscopy to evaluate defects in individual single-walled carbon nanotube (SWNT) devices assembled via dielectrophoresis from a surfactant-free solution. At 4.2 K, the majority of the devices show periodic and well-defined Coulomb diamonds near zero gate voltage corresponding to transport through a single quantum dot, while at higher gate voltages, beating behavior is observed due to small potential fluctuations induced by the substrate. The Coulomb diamonds were further modeled using a single electron transistor simulator. Our study suggests that SWNTs derived from stable solutions in this work are free from hard defects and are relatively clean. Our observations have strong implications on the use of solution-processed SWNTs for future nanoelectronic device applications.
Journal Title
Acs Nano
Volume
4
Issue/Number
5
Publication Date
1-1-2010
Document Type
Article
DOI Link
Language
English
First Page
2659
Last Page
2666
WOS Identifier
ISSN
1936-0851
Recommended Citation
"Evaluating Defects in Solution-Processed Carbon Nanotube Devices via Low-Temperature Transport Spectroscopy" (2010). Faculty Bibliography 2010s. 827.
https://stars.library.ucf.edu/facultybib2010/827
Comments
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