Evaluating Defects in Solution-Processed Carbon Nanotube Devices via Low-Temperature Transport Spectroscopy

    Authors

    P. Stokes;S. I. Khondaker

    Comments

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    Abbreviated Journal Title

    ACS Nano

    Keywords

    solution-processed; single electron transistor; nanotube; electron; transport; transport spectroscopy; defects; FIELD-EFFECT TRANSISTORS; QUANTUM DOTS; ELECTRICAL-TRANSPORT; RAMAN-SPECTROSCOPY; ROOM-TEMPERATURE; COULOMB-BLOCKADE; Chemistry, Multidisciplinary; Chemistry, Physical; Nanoscience &; Nanotechnology; Materials Science, Multidisciplinary

    Abstract

    We performed low-temperature electron transport spectroscopy to evaluate defects in individual single-walled carbon nanotube (SWNT) devices assembled via dielectrophoresis from a surfactant-free solution. At 4.2 K, the majority of the devices show periodic and well-defined Coulomb diamonds near zero gate voltage corresponding to transport through a single quantum dot, while at higher gate voltages, beating behavior is observed due to small potential fluctuations induced by the substrate. The Coulomb diamonds were further modeled using a single electron transistor simulator. Our study suggests that SWNTs derived from stable solutions in this work are free from hard defects and are relatively clean. Our observations have strong implications on the use of solution-processed SWNTs for future nanoelectronic device applications.

    Journal Title

    Acs Nano

    Volume

    4

    Issue/Number

    5

    Publication Date

    1-1-2010

    Document Type

    Article

    Language

    English

    First Page

    2659

    Last Page

    2666

    WOS Identifier

    WOS:000277976900023

    ISSN

    1936-0851

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