Ostwald Ripening Growth of Silicon Nitride Nanoplates

    Authors

    W. Y. Yang; F. M. Gao; G. D. Wei;L. A. An

    Comments

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    Abbreviated Journal Title

    Cryst. Growth Des.

    Keywords

    SINGLE-SOURCE PRECURSOR; HIGH-YIELD SYNTHESIS; OPTICAL-PROPERTIES; GOLD; CRYSTALLINE; SILVER; NANOBELTS; THIN; PHOTOLUMINESCENCE; MONODISPERSE; Chemistry, Multidisciplinary; Crystallography; Materials Science, ; Multidisciplinary

    Abstract

    In this paper, we have demonstrated the Oswald ripening growth of single-crystalline Si3N4 nanoplates. The formation of the plates involves three basic steps: formation and aggregation of the nanoparticles, grain coalescence within selective areas, and growth of one coarsened grain at the expense of the rest of the nanoparticles via an Oswald ripening process assisted by the oriented attachment mechanism. The obtained nanoplates exhibit an extremely high aspect ratio with an ultrathin thickness, flat Surface, and perfect crystal structure, and they could be utilized as substrates for constructing nanodevices.

    Journal Title

    Crystal Growth & Design

    Volume

    10

    Issue/Number

    1

    Publication Date

    1-1-2010

    Document Type

    Article

    Language

    English

    First Page

    29

    Last Page

    31

    WOS Identifier

    WOS:000274757100007

    ISSN

    1528-7483

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