Keywords
Cathodoluminescence; Neutron Radiation; Semiconductor; Galium Nitride
Abstract
The intent of this thesis is to explore the impact of utilizing 241-Americium Beryllium (241-AmBe) as a neutron radiation source on semiconductors. Semiconductors play a crucial role in spacecraft operations, providing vital functions such as power, communication, and storage solutions. By employing 241-AmBe as a neutron source, the materials can be safely handled within minutes after exposure, making it a highly favored choice for conducting radiation experiments on materials.
Thesis Completion Year
2024
Thesis Completion Semester
Fall
Thesis Chair
Flitsiyan, Elena
College
College of Sciences
Department
Physics
Thesis Discipline
Physics
Language
English
Access Status
Campus Access
Length of Campus Access
3 years
Campus Location
Orlando (Main) Campus
STARS Citation
Sorge, Margaret, "Characterization of Gallium Nitride Structure Modified by Neutron Irradiation" (2024). Honors Undergraduate Theses. 125.
https://stars.library.ucf.edu/hut2024/125
Rights Statement
