Power amplifier design with GaAs mesfet

Abstract

This thesis reviews the design theory and technique of micro- and millimeter-wave solid state device power amplifiers. The internal device physics and characteristics of MESFET are discussed. An overview of nonlinear microwave circuit parameters is given. A conventional design approach with operating power gain circles is adopted and then the circuit is optimized with a commercially available CAE tool. Effective use of harmonics termination and power combining techniques are indicated by the circuit performance. The performance results are consistent with design goals.

Notes

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Graduation Date

1991

Semester

Spring

Advisor

Christodoulou, Christos

Degree

Master of Science (M.S.)

College

College of Engineering

Department

Electrical Engineering

Degree Program

Electrical Engineering

Format

PDF

Pages

83 p.

Language

English

Length of Campus-only Access

None

Access Status

Masters Thesis (Open Access)

Location

Orlando (Main) Campus

Identifier

DP0027990

Subjects

Dissertations, Academic -- Engineering; Engineering -- Dissertations, Academic

Accessibility Status

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