Timing Margin Examination Using Laser Probing Technique

Keywords

Laser-induced propagation delay, Current injection at transistor drain, Timing margin characterization, Optical probing of CMOS signal paths, Simulation validation of measurements

Abstract

A laser probing procedure has been developed to examine the timing margin of signal paths in complex CMOS devices. In the procedure, injected current at one of the logic gate's transistor drains increases the propagation delay of the logic gate. This occurs because increased current at the transistor drain decreases the rate of charge transfer between the logic gate and its output load. Using an indirect measurement scheme, a curve depicting laser induced propagation delay as a function of illumination is experimentally generated. This curve is then analyzed to determine whether or not the examined signal path has critical timing. This indirect measurement technique is verified by using simulation techniques.

Notes

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Graduation Date

1989

Semester

Fall

Advisor

Brown, Harold K.

Degree

Master of Science (M.S.)

College

College of Engineering

Department

Electrical Engineering and Communication Sciences

Format

PDF

Pages

314 pages

Language

English

Length of Campus-only Access

None

Access Status

Masters Thesis (Open Access)

Location

Orlando (Main) Campus

Identifier

DP0026684

Subjects

Dissertations; Academic -- Engineering; Engineering -- Dissertations; Academic; Semiconductors--Testing--Optical methods; Delay faults (Semiconductors); Lasers--Measurement; Laser beams--Measurement; Timing circuits--Computer-aided design

Accessibility Status

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