Abstract

The relationship between the built-in potential and the energy bands in a heterojunction device is defined using the Anderson model. Based on this model, Poisson's equation for a nonhomogeneous semiconductor device in thermal equilibrium is derived and solved analytically for the special case of a doubly intrinsic abrupt heterojunction. Several numerical methods of solving Poisson's equation for general cases are explored to find the most efficient method. The validity of the chosen numerical method is tested against both the analytical solution for a Ge/GaAs doubly intrinsic diode and recently published results from similar numerical simulation studies. A p-i-n superlattice device is then analyzed, and the resulting numerical solutions of the electrostatic potential, electric field, carrier concentration, charge density, and energy band profiles are given. These results are utilized by other simulation software which yields the resonant energy levels in the conduction band of the p-i-n superlattice and their associated probability density functions.

Graduation Date

1988

Semester

Fall

Advisor

Brown, Harold K.

Degree

Master of Science (M.S.)

College

College of Engineering

Department

Electrical Engineering and Communication Sciences

Format

PDF

Pages

136 p.

Language

English

Rights

Public Domain

Length of Campus-only Access

None

Access Status

Masters Thesis (Open Access)

Identifier

DP0025765

Subjects

Dissertations, Academic -- Engineering; Engineering -- Dissertations, Academic

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