Analysis and simulation of third order intermodulation products in class AB RF power amplifiers
Abstract
Broad band high power amplifiers capable of handling multiple input frequencies simultaneously with low spurious output are used in many areas of communications, especially Electronic Warfare jamming transmitters. High , .efficiency is extremely important in many applications because of limited power supply. Class AB RF power amplifiers have good inherent efficiency but typically have high spurious outputs .· ,hen driven with multiple frequency inputs which can cause unwanted interference with friendly communications. In class AB amplifiers, reducing the output power level does not reduce the spurious levels as it does in class A amplifiers. The amplifier bias must be increased to reduce the spurious levels. A method for predicting the spurious output levels versus the bias is needed to optimize the efficiency versus the output spurious levels.
This thesis analyzes the spurious levels caused by the crossover jistortion and develops a mathematical model of the transfer function based on the voltage-current curves of the active devices. A two signal input is operated on by the transfer function to provide a predicted time domain output waveform. The Fast Fourier Transform of this output predicts the spurious output levels versus the bias conditions.
Notes
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Graduation Date
1992
Semester
Fall
Advisor
Belkerdid, Madjid A.
Degree
Master of Science (M.S.)
College
College of Engineering
Department
Electrical Engineering
Degree Program
Electrical Engineering
Format
Pages
46 p.
Language
English
Length of Campus-only Access
None
Access Status
Masters Thesis (Open Access)
Identifier
DP0029754
Subjects
Dissertations, Academic -- Engineering; Engineering -- Dissertations, Academic
STARS Citation
Vaninetti, Roy A., "Analysis and simulation of third order intermodulation products in class AB RF power amplifiers" (1992). Retrospective Theses and Dissertations. 4526.
https://stars.library.ucf.edu/rtd/4526
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