Keywords
Avalanche diode, Optical detectors
Abstract
Major advances in fiber optic transmissions have brought about a need for highly sensitive photodetectors. In order to detect this type of transmission, the photodetector must be able to detect one of the two low loss windows of the fiber optics transmission. The photodetector must also be characterized by a high gain and fast speed of response without generating excessive noise power. This report compares different types of high speed phodetectors with emphasis on the merits of using an avalanche photodiode. The report studies the avalanche multiplication and the signal-to-noise power ratio in the ternary InGaAs. The effects of the absorption coefficient, the depletion width, and the impurity concentration are studied. Finally, an optimization of the signal-to-noise power ratio is achieved by selecting the proper impurity concentration profile at suitable values of absorption coefficient and epitaxial width.
Notes
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Graduation Date
1979
Degree
Master of Science (M.S.)
College
College of Engineering
Format
Pages
68 p.
Language
English
Rights
Public Domain
Length of Campus-only Access
None
Access Status
Masters Thesis (Open Access)
Identifier
DP0013263
Subjects
Diodes -- Avalanche, Optical detectors
STARS Citation
Wymer, Susan Lee, "Study of the Avalanche Multiplication and Signal-to-Noise Power Ratio in the Ternary InxGa1-xAs Avalanche Photodiode" (1979). Retrospective Theses and Dissertations. 459.
https://stars.library.ucf.edu/rtd/459
Contributor (Linked data)
University of Central Florida. College of Engineering [VIAF]
Collection (Linked data)
Accessibility Status
Searchable text