Keywords
Microwave amplifiers; Noise; Microwave transistors
Abstract
The Gallium Arsenide Field Effect transistor (GaAs FET) is experiencing a widespread acceptance in space and terrestrial systems due to its low noise, high gain and frequency characteristics unmatched by bipolar devices. This paper describes a design of a 4 GHz low noise amplifier with GaAs FETs using the scattering parameters method. Special attention is given to overall noise/gain optimization in the band of interest. The Smith Chart is used extensively to match the two-port device with microstrip networks. Analysis and performance of the amplifier are presented.
Graduation Date
1985
Semester
Fall
Advisor
Belkerdid, Madjid A.
Degree
Master of Science (M.S.)
College
College of Engineering
Degree Program
Engineering
Format
Language
English
Rights
Public Domain
Length of Campus-only Access
None
Access Status
Masters Thesis (Open Access)
Identifier
DP0018310
STARS Citation
Al-Rawahy, Abdulla I., "Design and Analysis of a 4GHz Low Noise Amplifier" (1985). Retrospective Theses and Dissertations. 4810.
https://stars.library.ucf.edu/rtd/4810
Contributor (Linked data)
Madjid A. Belkerdid (Q57743535)
University of Central Florida. College of Engineering [VIAF]
Accessibility Status
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