Microwave amplifiers -- Noise, Microwave transistors -- Noise
The Gallium Arsenide Field Effect transistor (GaAs FET) is experiencing a widespread acceptance in space and terrestrial systems due to its low noise, high gain and frequency characteristics unmatched by bipolar devices. This paper describes a design of a 4 GHz low noise amplifier with GaAs FETs using the scattering parameters method. Special attention is given to overall noise/gain optimization in the band of interest. The Smith Chart is used extensively to match the two-port device with microstrip networks. Analysis and performance of the amplifier are presented.
If this is your thesis or dissertation, and want to learn how to access it or for more information about readership statistics, contact us at STARS@ucf.edu
Belkerdid, Madjid A.
Master of Science (M.S.)
College of Engineering
Length of Campus-only Access
Masters Thesis (Open Access)
Al-Rawahy, Abdulla I., "Design and Analysis of a 4GHz Low Noise Amplifier" (1985). Retrospective Theses and Dissertations. 4810.