Microwave amplifiers; Noise; Microwave transistors
The Gallium Arsenide Field Effect transistor (GaAs FET) is experiencing a widespread acceptance in space and terrestrial systems due to its low noise, high gain and frequency characteristics unmatched by bipolar devices. This paper describes a design of a 4 GHz low noise amplifier with GaAs FETs using the scattering parameters method. Special attention is given to overall noise/gain optimization in the band of interest. The Smith Chart is used extensively to match the two-port device with microstrip networks. Analysis and performance of the amplifier are presented.
Belkerdid, Madjid A.
Master of Science (M.S.)
College of Engineering
Length of Campus-only Access
Masters Thesis (Open Access)
Al-Rawahy, Abdulla I., "Design and Analysis of a 4GHz Low Noise Amplifier" (1985). Retrospective Theses and Dissertations. 4810.
Contributor (Linked data)