High Speed Latchup-Free CMOS Using TiSi2, N-Well, Technology

Author

Faheem Mohamedi, University of Central Florida

Abstract

This report discusses high speed latchup-free 0.5 µ m-channel CMOS using self-aligned TiSi₂ and deep-trench isolation n-well technology. This technology of deep-trench isolation combined with the epitaxial layer eliminates many problems such as poor device to device isolation, latchup susceptibility and relatively high sheet resistance of n+ and p+ diffusion layers. Thus CMOS devices operate at a propagation delay time of 140 p with a power dissipation of 1.5mW per inverter and attain a maximum clock frequency of 700 MHZ without suffering from latchup even at a latchup trigger current of 100 mA.

Notes

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Graduation Date

1986

Semester

Fall

Advisor

Malocha, Donald C.

Degree

Master of Science (M.S.)

College

College of Engineering

Format

PDF

Pages

40 p.

Language

English

Rights

Public Domain

Length of Campus-only Access

None

Access Status

Masters Thesis (Open Access)

Identifier

DP0020385

STARS Citation

Mohamedi, Faheem, "High Speed Latchup-Free CMOS Using TiSi2, N-Well, Technology" (1986). Retrospective Theses and Dissertations. 4975.
https://stars.library.ucf.edu/rtd/4975

Contributor (Linked data)

Donald C. Malocha (Q59394643)

University of Central Florida. College of Engineering [VIAF]

University of Central Florida. College of Engineering [LC]

Accessibility Status

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