Title
Emitter-Base Junction Capacitance Of Heterojunction Bipolar Transistors.
Abstract
An analytical treatment is presented for modeling the forward-voltage emitter-base space-charge-region capacitance of heterojunction bipolar transistors or heterojunction diodes. A more accurate model is developed for the thickness and potential barrier of the space-charge region for all voltages. Based on this model and the approximation that the intrinsic level is piecewise linear with respect to position in the space-charge region, a forward-voltage analytical quasistatic capacitance model is derived. A comparison of the presented model with the depletion model is included.
Publication Date
12-1-1987
Number of Pages
160-163
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0023535795 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0023535795
STARS Citation
Liou, J. J. and Lindholm, F. A., "Emitter-Base Junction Capacitance Of Heterojunction Bipolar Transistors." (1987). Scopus Export 1980s. 225.
https://stars.library.ucf.edu/scopus1980/225