Title

Improved Bipolar Model Equations For Small-Signal Circuit Simulation

Abstract

The silicon bipolar model equations have been examined and implemented in small-signal circuit simulation. The modified model equations account for the physical effects of emitter current crowding, emitter-base sidewall injection, basewidth modulation, base-conductivity modulation, base pushout, and currentdependent series resistance for all levels of injection. SPICE simulation employing the present model iscompared with the small-signal PISCESdevice simulation and good agreement is obtained. © 1992 Taylor & Francis Ltd.

Publication Date

1-1-1992

Publication Title

International Journal of Electronics

Volume

72

Issue

4

Number of Pages

619-630

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1080/00207219208925602

Socpus ID

0026852723 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0026852723

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