Title

Modeling Si/Si1-XGeX Heterojunction Bipolar Transistors

Abstract

Modeling Si/Si1-xGex/Si heterojunction bipolar transistors (HBTs) has been examined. The model equations account for valence- and conduction-band discontinuities, heavy doping effects and high collector current effects. Bias-dependent emitter resistance and heterojunction capacitances are also included. Comparison between the model prediction and the experimental data is used to demonstrate the model utility and accuracy. Good agreement between the model prediction and measurement has been obtained. The model is useful for predicting the gate delay of emitter-coupled logic at different temperatures. © 1992.

Publication Date

1-1-1992

Publication Title

Solid State Electronics

Volume

35

Issue

7

Number of Pages

921-926

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/0038-1101(92)90319-8

Socpus ID

0026897217 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0026897217

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