Title
Base current reversal in bipolar transistors and circuits: a review and update
Abstract
A detailed study of base current reversal in silicon bipolar transitors and GaAs heterojunction bipolar transistors has been made. The physics of impact ionisation is presented followed by modelling of avalanche multiplication in devices. The effects of base current reversal on analogue and digital circuit operation are discussed.
Publication Date
8-1-1994
Publication Title
IEE Proceedings: Circuits, Devices and Systems
Volume
141
Issue
4
Number of Pages
299-306
Document Type
Article
Identifier
scopus
Personal Identifier
scopus
DOI Link
https://doi.org/10.1049/ip-cds:19941101
Copyright Status
Unknown
Socpus ID
0028479895 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0028479895
STARS Citation
Yuan, J. S., "Base current reversal in bipolar transistors and circuits: a review and update" (1994). Scopus Export 1990s. 121.
https://stars.library.ucf.edu/scopus1990/121