Title

Effect of base profile on the base transit time of the bipolar transistor for all levels of injection

Abstract

The effect of the base profile on the base transit time of the bipolar transistor for all levels of injection has been presented. Comparing the uniform base profile with the exponential base profile in low injection, the uniform base profile gives a lower base transit time for a given base resistance and peak base concentration, while the exponential base profile gives a lower base transit time for a given base resistance and base width at large base widths. At high injection the uniform base profile always gives the minimum base transit time. The uniform base doping is the optimal base profile for BiCMOS circuits in which the bipolar transistors are operated under high injection.

Publication Date

2-1-1994

Publication Title

IEEE Transactions on Electron Devices

Volume

41

Issue

2

Number of Pages

212-216

Document Type

Article

Identifier

scopus

Personal Identifier

scopus

DOI Link

https://doi.org/10.1109/16.277377

Socpus ID

0028374604 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0028374604

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