Title

High-Performance P-N-P Heterojunction Bipolar Transistor Design

Abstract

The performance of P-n-p AlGaAs/GaAs heterojunction bipolar transistors (HBTs) for analog and digital circuit applications is compared to that of N-p-n HBTs. The theoretical analysis shows that the P-n-p HBTs are comparable with N-p-n HBTs in high-speed digital operation, while the N-p-n HBTs exhibit higher cut-off frequency in microwave and millimeter-wave operation. Analytical equations and SPICE circuit simulation are used in support of the comparison between the P-n-p and N-p-n HBTs. Optimization of device doping profile design for P-n-p and N-p-n heterojunction bipolar transistors in analog and digital circuits are presented. © 1991.

Publication Date

1-1-1991

Publication Title

Solid State Electronics

Volume

34

Issue

12

Number of Pages

1347-1352

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/0038-1101(91)90028-W

Socpus ID

0026402753 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0026402753

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