Title

Modeling The Current-Dependent Ƒt For Algaas/Gaas Heterojunction Bipolar Transistor Design

Abstract

The modeling of current-dependent cut-off frequency f{hook}T for AlGaAs/GaAs heterojunction bipolar transistors has been investigated. The analytical equations developed account for high-current base widening, current-dependent collector-base junction capacitance, and proton and nonproton implanted collectors. The ballistic transport and velocity overshoot effects are accounted for in the modeling equations. Experimental results reported in the literature are compared in support of the model utility and accuracy. Optimization of heterojunction bipolar transistor design is discussed based on current-dependent f{hook}T analysis. © 1991.

Publication Date

1-1-1991

Publication Title

Solid State Electronics

Volume

34

Issue

10

Number of Pages

1103-1107

Document Type

Article

Personal Identifier

scopus

DOI Link

https://doi.org/10.1016/0038-1101(91)90106-9

Socpus ID

0026238996 (Scopus)

Source API URL

https://api.elsevier.com/content/abstract/scopus_id/0026238996

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