Title
Simple method for extracting the difference between the drain and source series resistances in MOSFETs
Keywords
MOSFETs; Semiconductor device characterisation
Abstract
A simple method for extracting the difference between the drain and source series resistances (Rd − Rs) in MOSFETs is presented. This method is applicable for n- and p-channel MOSFETs with any channel length. The results show that the magnitude of (Rd - Rs) increases with the drain current. © 1994, IEE. All rights reserved.
Publication Date
6-9-1994
Publication Title
Electronics Letters
Volume
30
Issue
12
Number of Pages
1013-1015
Document Type
Article
Identifier
scopus
Personal Identifier
scopus
DOI Link
https://doi.org/10.1049/el:19940681
Copyright Status
Unknown
Socpus ID
0028769437 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0028769437
STARS Citation
Ortiz-Conde, A.; Liou, J. J.; and Wong, W., "Simple method for extracting the difference between the drain and source series resistances in MOSFETs" (1994). Scopus Export 1990s. 140.
https://stars.library.ucf.edu/scopus1990/140