Title
Band Gap Scaling And Dispersion Of The Electronic Kerr Effect
Abstract
A significant dispersion of the electronic Kerr effect n2 recently was observed within the two-photon absorption (2PA) band in ZnSe. The dispersion and magnitude of the observed n2 can be partially described using a Kramers-Kronig analysis, which effectively gives a causal relation between imaginary (2PA coefficient) and real n2 components of the third-order nonlinear susceptibility. Starting with the magnitude, bandgap scaling, and dispersion of the 2PA in semiconductors, the authors have obtained by means of the KK transformation technique the corresponding properties for the refractive counterpart, namely, the bound electron Kerr effect n2. The derived expression for n2 gives excellent agreement with the measured values in semiconductors as well as wide-gap dielectrics and, therefore, would seem to be universal.
Publication Date
12-1-1990
Publication Title
XVII International Conference on Quantum Electronics. Digest of
Document Type
Article; Proceedings Paper
Personal Identifier
scopus
Copyright Status
Unknown
Socpus ID
0025544952 (Scopus)
Source API URL
https://api.elsevier.com/content/abstract/scopus_id/0025544952
STARS Citation
Sheik-Bahae, M.; Hagan, D. J.; and Van Stryland, E. W., "Band Gap Scaling And Dispersion Of The Electronic Kerr Effect" (1990). Scopus Export 1990s. 1466.
https://stars.library.ucf.edu/scopus1990/1466